Temperature dependent optical and electrical characterization of SnS/CdS solar cell

The optical and electrical properties of SnS thin film solar cell, manufactured by close spaced sublimation, was studied by electroreflectance spectroscopy, external quantum efficiency and current-voltage characteristics in the temperature range of T = 20-300 K. Temperature dependence of the open circuit voltage indicated to the interface recombination as the main limiting factor for the device performance. Room temperature external quantum efficiency curves of SnS solar cell showed two optical transitions at 1.30 eV and 1.53 eV. These findings contribute to the better understanding of the fundamental properties of SnS as a prospective absorber material for next-generation solar cells.

Automated summary

In this study, the optical and electrical properties of SnS thin film solar cells were investigated using electroreflectance spectroscopy, external quantum efficiency, and current-voltage characteristics. The temperature dependence of the open circuit voltage indicated that interface recombination was the main limiting factor for device performance. The room temperature external quantum efficiency curves of SnS solar cells showed two optical transitions at 1.30 eV and 1.53 eV, providing insights into the fundamental properties of SnS as a potential absorber material for next-generation solar cells.