Evaluation of thin films intermixing by photoacoustic spectroscopy

In this paper, we show the usefulness of photoacoustic spectroscopy (PAS) to monitor the intermixing at the thin films heterojunction. CdTe/CdS bilayers with different thicknesses were used to analyze the effect of S-Te interdiffusion on the PAS spectra. Unlike the spectrum measured by the optical transmittance technique, the photoacoustic spectrum shows an optical absorption band, in addition to the absorption edge corresponding to the CdTe layer. The position of the band changes from 2.31 to 1.93 eV depending on the CdTe layer thickness in the structure. The band shifts were associated with the composition of the ternary CdS1-xTex alloy at the interface. Our interpretation of the results was supported by the PAS-Phase-Resolved and the X-Ray photoelectron spectroscopy techniques.

Automated summary

The paper demonstrates the utility of photoacoustic spectroscopy (PAS) in monitoring intermixing at thin film heterojunctions. By analyzing CdTe/CdS bilayers of different thicknesses, researchers observed changes in the position of an optical absorption band correlating with the CdTe layer thickness in the structure. These findings were supported by PAS-Phase-Resolved and X-Ray photoelectron spectroscopy techniques.