Journal
THIN SOLID FILMS
Volume 736, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2021.138910
Keywords
Cubic Indium nitride; Plasma-assisted molecular beam epitaxy; Berkovich nanoindentation; Mechanical properties; Thin films
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In this study, the mechanical properties of cubic indium nitride were investigated using a Berkovich indenter, with a hardness value of 12.5 GPa, Young's modulus value of 365.6 GPa, and a Poisson's ratio of 0.3.
The potential of the III-nitride semiconductor materials for modern optoelectronic applications as diodes, transistors, LEDs, and photovoltaics has prompted the mechanical characterization of small volumes as thin films. In this paper, the load-displacement curves of cubic indium nitride (c-InN) obtained during the nanoindentation with a Berkovich indenter were investigated. c-InN was obtained by plasma-assisted molecular beam epitaxy growth on c-GaN/MgO (100). The thickness of the c-GaN buffer layer used in all the films studied was 350 nm to eliminate the substrate's effect on the material studied properties. The c-InN thickness is around 180 nm. The reflection high energy electron diffraction and the X-ray diffraction results show that the c-GaN buffer and c-InN grown layers had a high cubic zincblende phase with more than 97%. The obtained value of the hardness is 12.5 +/- 0.4 GPa, and the value for Young's modulus is 365.6 +/- 7 GPa with a Poisson's ratio of 0.3.
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