Effect of different types of substrate surface treatments on the graphene device performance

Graphene-substrate interface is very crucial for analyzing graphene device performance. In this article, we have shown how the graphene device performance got affected because of different types of substrate surface treatment techniques used before graphene transfer. For fabrication of graphene devices, monolayer chemical vapor deposition (CVD) graphene was transferred onto SiO2 grown thermally on Si substrate. Forming gas annealed SiO2/Si shows better device performance as compared with as-grown SiO2 on Si substrate. A further effect of oxygen plasma and argon plasma cleaning of SiO2 surface before graphene transfer was investigated. Forming gas annealing improves the performance and plasma treatment degrade the graphene devices' performance.

Automated summary

The graphene-substrate interface is critical for analyzing graphene device performance. This article demonstrates the impact of different substrate surface treatment techniques on graphene device performance, showing that forming gas annealing can enhance performance while plasma treatment can degrade it.