Related references
Note: Only part of the references are listed.High-performance normally off p-GaN gate high-electron-mobility transistor with In0.17Al0.83N barrier layer design
Yi Huang et al.
OPTICAL AND QUANTUM ELECTRONICS (2021)
Analytical Model for Two-Dimensional Electron Gas Charge Density in Recessed-Gate GaN High-Electron-Mobility Transistors
Samaneh Sharbati et al.
JOURNAL OF ELECTRONIC MATERIALS (2021)
Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region
Xinke Liu et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2020)
Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlOxNy gate insulator
Myoung-Jin Kang et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2019)
Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure
Niraj Man Shrestha et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Review of technology for normally-off HEMTs with p-GaN gate
Giuseppe Greco et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2018)
High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design
Hsien-Chin Chiu et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)
Polarization-Engineered n+GaN/InGaN/AlGaN/GaN Normally-Off MOS HEMTs
Dagmar Gregusova et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2017)
High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure
Myoung-Jin Kang et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2017)
On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices
L. Efthymiou et al.
APPLIED PHYSICS LETTERS (2017)
Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess
Yijun Shi et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2
Woojin Choi et al.
IEEE ELECTRON DEVICE LETTERS (2014)
Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer
Liang-Yu Su et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2014)
Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique
Zhe Xu et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC
A. Perez-Tomas et al.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2013)
A Theoretical Calculation of the Impact of GaN Cap and AlxGa1-xN Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/AlxGa1-xN/GaN Heterostructure
Guipeng Liu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance
Ronghua Wang et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth
T. J. Anderson et al.
JOURNAL OF ELECTRONIC MATERIALS (2010)
AlGaN/GaN recessed MIS-gate HFET with high-threshold-voltage normally-off operation for power electronics applications
Tohru Oka et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Gate injection transistor (GIT) - A normally-off AlGaN/GaN power transistor using conductivity modulation
Yasuhiro Uemoto et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)
AlGaN/GaN HEMTs with thin InGaN cap layer for normally off operation
T. Mizutani et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Integration of enhancement and depletion-mode AlGaN/GaN MIS-HFETs by fluoride-based plasma treatment
Ruonan Wang et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2007)
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
Yong Cai et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications
W Saito et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Y Cai et al.
IEEE ELECTRON DEVICE LETTERS (2005)
Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes
T Hashizume et al.
APPLIED SURFACE SCIENCE (2004)
Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers
T Hashizume et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2004)
Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire
T Egawa et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2001)