Barrier height tuning in Ti/4H-SiC Schottky diodes

In this work, we investigated the effects of annealing temperature and metal thickness on the Schottky barrier height in state-of-the-art Ti/4H-SiC rectifiers. By varying these two parameters, a controlled lowering of the Schottky barrier height has been obtained, thus giving the possibility to improve the efficiency of device in terms of power consumption.

Automated summary

By investigating the effects of annealing temperature and metal thickness on the Schottky barrier height in Ti/4H-SiC rectifiers, controlled lowering of the barrier height has been achieved, potentially improving efficiency in terms of power consumption.