4.3 Article

SPICE modeling of cycle-to-cycle variability in RRAM devices

Journal

SOLID-STATE ELECTRONICS
Volume 185, Issue -, Pages -

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2021.108040

Keywords

RRAM; Variability; Modeling; LTSpice; Fitdistrplus

Funding

  1. Spanish Ministry of Science, Innovation and Universities [TEC2017-84321-C4-1-R, TEC2017-84321-C4-4-R, PID2019-103869RB-C32]

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This study addresses the inclusion of uncorrelated cycle-to-cycle variability in the LTSpice quasistatic memdiode model for RRAM devices. By analyzing experimental data and incorporating suitable model parameter distributions, Monte Carlo simulations are carried out to compare experimental and simulated observables, with recalculations of model estimands done if necessary. Special emphasis is placed on describing the main difficulties underlying this seemingly simple procedure.
In this work, we investigated how to include uncorrelated cycle-to-cycle (C2C) variability in the LTSpice quasistatic memdiode model for RRAM devices. Variability in the I-V curves is first addressed through an in-depth study of the experimental data using the oistrplus package for the R language. This provides a first approximation to the identification of the most suitable model parameter distributions. Next, the selected candidate distributions are incorporated into the model script and used for carrying out Monte Carlo simulations. Finally, the experimental and simulated observables (set and reset currents, transition voltages, etc.) are statistically compared and the model estimands recalculated if it is necessary. Here, we put special emphasis on describing the main difficulties behind this seemingly simple procedure.

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