Influencing mechanism of post-sulfurization with sulfur flakes on phase evolution and Schottky diode characteristic of Cu2ZnSnS4 thin films sputter deposited from a single target

While single target sputter deposition appears very attractive to prepare kesterite Cu2ZnSnS4 (CZTS) thin films for photovoltaic applications, the growth of secondary phases arising as a consequence of stoichiometric deviation stemming from variation in sputter yield of elements must be prevented. Here, we demonstrate growth of phase pure kesterite CZTS thin films by RF magnetron sputtering of a single target by intuitively manipulating the target composition and post-sulfurization process carried out in a quasi-open environment using sulfur flakes. The influencing mechanism of post-sulfurization process was elucidated from systematic variation in the dwell time, temperature and the sulfur amount. A high temperature or a shorter dwell time yielded a small-grained microstructure associated with the presence of secondary phases. Phase pure CZTS films with better microstructural features were obtained for sulfurization at 500 degrees C for 60 min with 1.0 g of sulfur flakes. This film exhibited an optical bandgap of similar to 1.58 eV indicating its photovoltaic potential. A device in the Mo/CZTS/Ag configuration showed typical features of a Schottky junction. The obtained current-voltage characteristic was analyzed to estimate saturation current, ideality factor and series resistance in correlation with the properties of the CZTS film.

Automated summary

The study demonstrated the growth of phase pure kesterite CZTS thin films by manipulating the target composition and post-sulfurization process. Optimal conditions for phase pure CZTS films were found to be sulfurization at 500 degrees C for 60 min with 1.0 g of sulfur flakes. High temperature or shorter dwell time resulted in the presence of secondary phases and smaller grain size microstructure in the films.