Related references
Note: Only part of the references are listed.Selective Pattern Growth of Atomically Thin MoSe2 Films via a Surface-Mediated Liquid-Phase Promoter
Won Tae Kang et al.
ACS APPLIED MATERIALS & INTERFACES (2021)
Controllable Epitaxial Growth of Large-Area MoS2/WS2 Vertical Heterostructures by Confined-Space Chemical Vapor Deposition
Xiumei Zhang et al.
SMALL (2021)
Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition
Meng Peng et al.
SCIENCE ADVANCES (2021)
Unipolar barrier photodetectors based on van der Waals heterostructures
Yunfeng Chen et al.
NATURE ELECTRONICS (2021)
Ideal PN photodiode using doping controlled WSe2-MoSe2 lateral heterostructure
Ji Eun Kim et al.
JOURNAL OF MATERIALS CHEMISTRY C (2021)
Lateral 2D WSe2 p-n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics
Jiacheng Sun et al.
ADVANCED MATERIALS (2020)
Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics
Abin Varghese et al.
NANO LETTERS (2020)
Tungsten Dichalcogenide Nanoflake/InGaZnO Thin-Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits
Silah Lee et al.
ADVANCED ELECTRONIC MATERIALS (2020)
InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics
Liangmei Wu et al.
NANO RESEARCH (2020)
Improved Current Density and Contact Resistance in Bilayer MoSe2 Field Effect Transistors by AIOx Capping
Divya Somvanshi et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Substitutional Fluorine Doping of Large-Area Molybdenum Disulfide Monolayer Films for Flexible Inverter Device Arrays
Sang-Soo Chee et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
A Self-Powered Photovoltaic Photodetector Based on a Lateral WSe2-WSe2 Homojunction
Chaoyang Tan et al.
ACS APPLIED MATERIALS & INTERFACES (2020)
Low-Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors
Jingli Wang et al.
ADVANCED FUNCTIONAL MATERIALS (2020)
Lateral Monolayer MoSe2-WSe2p-n Heterojunctions with Giant Built-In Potentials
Shuai Jia et al.
SMALL (2020)
Homogeneous 2D MoTe2CMOS Inverters and p-n Junctions Formed by Laser-Irradiation-Induced p-Type Doping
Jing Chen et al.
SMALL (2020)
Vertically Stacked MoSe2/MoO2 Nanolayered Photodetectors with Tunable Photoresponses
Nasrullah Wazir et al.
ACS APPLIED NANO MATERIALS (2020)
Spatially controlled lateral heterostructures of graphene and transition metal dichalcogenides toward atomically thin and multi-functional electronics
Gwangwoo Kim et al.
NANOSCALE (2020)
WSe2 Photovoltaic Device Based on Intramolecular p-n Junction
Yicheng Tang et al.
SMALL (2019)
Gate-Tunable Graphene-WSe2 Heterojunctions at the Schottky-Mott Limit
Samuel W. LaGasse et al.
ADVANCED MATERIALS (2019)
High-Performance Photodiode Based on Atomically Thin WSe2/MoS2 Nanoscroll Integration
Wenjie Deng et al.
SMALL (2019)
Controllable P- and N-Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits
Yong Ju Park et al.
SMALL (2019)
Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport
Fu Zhang et al.
SCIENCE ADVANCES (2019)
Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization
Liang Lv et al.
NATURE COMMUNICATIONS (2019)
Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics
Hyun Goo Ji et al.
ADVANCED MATERIALS (2019)
High-Performance WSe2 Photodetector Based on a Laser-Induced p-n Junction
Jing Chen et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Self-Powered Broad-band Photodetectors Based on Vertically Stacked WSe2/Bi2Te3 p-n Heterojunctions
Huawei Liu et al.
ACS NANO (2019)
High efficiency and fast van der Waals hetero-photodiodes with a unilateral depletion region
Feng Wu et al.
NATURE COMMUNICATIONS (2019)
Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer
Junchi Liu et al.
NANO RESEARCH (2019)
AsP/InSe Van der Waals Tunneling Heterojunctions with Ultrahigh Reverse Rectification Ratio and High Photosensitivity
Feng Wu et al.
ADVANCED FUNCTIONAL MATERIALS (2019)
Recent Developments in Controlled Vapor-Phase Growth of 2D Group 6 Transition Metal Dichalcogenides
Se-Yang Kim et al.
ADVANCED MATERIALS (2019)
Metal-Guided Selective Growth of 2D Materials: Demonstration of a Bottom-Up CMOS Inverter
Ming-Hui Chiu et al.
ADVANCED MATERIALS (2019)
A homogeneous p-n junction diode by selective doping of few layer MoSe2 using ultraviolet ozone for high-performance photovoltaic devices
Xiaoming Zheng et al.
NANOSCALE (2019)
2D GeP: An Unexploited Low-Symmetry Semiconductor with Strong In-Plane Anisotropy
Liang Li et al.
ADVANCED MATERIALS (2018)
Tunable Tribotronic Dual-Gate Logic Devices Based on 2D MoS2 and Black Phosphorus
Guoyun Gao et al.
ADVANCED MATERIALS (2018)
Phosphorous doped p-type MoS2 polycrystalline thin films via direct sulfurization of Mo film
Tomohiro Momose et al.
AIP ADVANCES (2018)
Self-powered photovoltaic photodetector established on lateral monolayer MoS2-WS2 heterostructures
Wanhui Wu et al.
NANO ENERGY (2018)
Ultrahigh-photoresponsive UV photodetector based on a BP/ReS2 heterostructure p-n diode
Shiwei Cao et al.
NANOSCALE (2018)
Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition
Sushil Kumar Pandey et al.
NANOSCALE (2018)
Gate tunable photovoltaic effect in a MoSe2 homojunction enabled with different thicknesses
Yujue Yang et al.
JOURNAL OF MATERIALS CHEMISTRY C (2017)
Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping
Yajun Fu et al.
APPLIED PHYSICS LETTERS (2017)
Chemical Vapor Deposition Growth of Degenerate p-Type Mo-Doped ReS2 Films and Their Homojunction
Jing-Kai Qin et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Ultrasensitive Near-Infrared Photodetectors Based on a Graphene-MoTe2-Graphene Vertical van der Waals Heterostructure
Kun Zhang et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Synthesis of WS2xSe2-2x Alloy Nanosheets with Composition-Tunable Electronic Properties
Xidong Duan et al.
NANO LETTERS (2016)
Vacancy-Induced Formation and Growth of Inversion Domains in Transition-Metal Dichalcogenide Monolayer
Junhao Lin et al.
ACS NANO (2015)
A Van Der Waals Homojunction: Ideal p-n Diode Behavior in MoSe2
Youngjo Jin et al.
ADVANCED MATERIALS (2015)
Ultimate thin vertical p-n junction composed of two-dimensional layered molybdenum disulfide
Hua-Min Li et al.
NATURE COMMUNICATIONS (2015)
Chemical Vapor Deposition Growth of Crystalline Mono layer MoSe2
Xingli Wang et al.
ACS NANO (2014)
Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
Joonki Suh et al.
NANO LETTERS (2014)
Atomically thin p-n junctions with van der Waals heterointerfaces
Chul-Ho Lee et al.
NATURE NANOTECHNOLOGY (2014)
Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
Wu Zhou et al.
NANO LETTERS (2013)
Possible doping strategies for MoS2 monolayers: An ab initio study
Kapildeb Dolui et al.
PHYSICAL REVIEW B (2013)
Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2
Philipp Tonndorf et al.
OPTICS EXPRESS (2013)
A hybrid surface passivation on HgCdTe long wave infrared detector with in-situ CdTe deposition and high-density hydrogen plasma modification
W. D. Hu et al.
APPLIED PHYSICS LETTERS (2011)
The structure of niobium-doped MoSe2 and WSe2
Moussa Bougouma et al.
BULLETIN OF THE CHEMICAL SOCIETY OF ETHIOPIA (2011)
Chemical accuracy for the van der Waals density functional
Jiri Klimes et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2010)
Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors
W. D. Hu et al.
JOURNAL OF APPLIED PHYSICS (2009)
Analysis of dark current contributions in mercury cadmium telluride junction diodes
V Gopal et al.
INFRARED PHYSICS & TECHNOLOGY (2002)