4.7 Article

Synthesis of the ZnFe2O4/ZnSnO3 nanocomposite and enhanced gas sensing performance to acetone

Journal

SENSORS AND ACTUATORS B-CHEMICAL
Volume 346, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2021.130524

Keywords

Hydrothermal; ZnFe2O4; ZnSnO3; Acetone; Gas sensor

Funding

  1. National Natural Science Foundation of China [61604025]
  2. Chongqing Basic and Frontier Research Project [KJQN201800809]
  3. Chongqing Science and Technology Commission [cstc2018jcyjAX0500]
  4. Chongqing Key Laboratory of Catalysis and New Environmental Materials [KFJJ2019087]

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The ZnFe2O4/ZnSnO3 nanocomposite was prepared and characterized, showing excellent gas-sensing performance towards acetone due to its specific surface area, oxygen vacancy, and n-n heterojunction. This nanocomposite exhibited fast response, long-term stability, and good humidity resistance, making it a promising candidate for gas sensor applications.
Acetone is an important biomarker for the diagnosis of diabetes. In this work, the ZnFe2O4/ZnSnO3 nanocomposite was first prepared via a facile two-step hydrothermal method, and then obtained by the subsequent calcination process. The structure, morphology, and composition of the nanocomposite were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Brunner Emmet Teller (BET), scanning electron microscope (SEM), Transmission Electron Microscopy (TEM) and Fourier transform infrared spectrophotometer (DR-FTIR) techniques, and the gas-sensing performance of the composites were investigated comprehensively. The ZnFe2O4/ZnSnO3 nanocomposite is consisted by the ZnSnO3 cubic and the urchin-like ZnFe2O4. The asprepared ZnFe2O4/ZnSnO3-0.25 gas sensor shows excellent gas-sensing performance toward acetone, including fast response-recovery time (9 s/16 s to 30 ppm acetone), long-term stability and good humidity resistance at 200 degrees C. The improved gas sensing performance of ZnFe2O4/ZnSnO3-0.25 nanocomposite could be due to its large specific surface area, oxygen vacancy and n-n heterojunction.

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