n-ZnO/p-CuZnS heterostructure deposited by spray pyrolysis for photosensor application in the UV region

In this work, n-ZnO/p-CuZnS heterojunction-based UV photodetector is fabricated using the spray pyrolysis technique. The current-voltage (I-V) characterization under dark condition demonstrated good rectifying behavior. For the fixed bias voltage, upon illumination with UV light (wavelength, lambda = 385 nm), the current has increased. At 1 V bias, a responsivity of 0.255 A/W was recorded. Using the thermionic emission (TE) and Chueng models, the carrier transport properties of the photodetector were explained. Upon illumination, barrier height decreased from 0.89 to 0.79. Low-temperature Raman analysis was carried out to investigate the temperature-dependent strain between the layers. Photoluminescence study employed for defect analysis showed suppressed emissions indicating better absorption (c) 2021 Elsevier B.V. All rights reserved.

Automated summary

In this study, a UV photodetector based on n-ZnO/p-CuZnS heterojunction was fabricated using spray pyrolysis technique. The device showed good rectifying behavior and increased current under UV illumination. The carrier transport properties were explained using thermionic emission and Chueng models, with a decrease in barrier height observed upon illumination. Raman analysis at low temperature was used to investigate the strain between layers, and photoluminescence study indicated better absorption with suppressed emissions.