Incomplete Charge Collection at Inter-Pixel Gap in Low- and High-Flux Cadmium Zinc Telluride Pixel Detectors

The success of cadmium zinc telluride (CZT) detectors in room-temperature spectroscopic X-ray imaging is now widely accepted. The most common CZT detectors are characterized by enhanced-charge transport properties of electrons, with mobility-lifetime products mu e tau e > 10(-2) cm(2)/V and mu h tau h > 10(-5) cm(2)/V. These materials, typically termed low-flux LF-CZT, are successfully used for thick electron-sensing detectors and in low-flux conditions. Recently, new CZT materials with hole mobility-lifetime product enhancements (mu h tau h > 10(-4) cm(2)/V and mu e tau e > 10(-3) cm(2)/V) have been fabricated for high-flux measurements (high-flux HF-CZT detectors). In this work, we will present the performance and charge-sharing properties of sub-millimeter CZT pixel detectors based on LF-CZT and HF-CZT crystals. Experimental results from the measurement of energy spectra after charge-sharing addition (CSA) and from 2D X-ray mapping highlight the better charge-collection properties of HF-CZT detectors near the inter-pixel gaps. The successful mitigation of the effects of incomplete charge collection after CSA was also performed through original charge-sharing correction techniques. These activities exist in the framework of international collaboration on the development of energy-resolved X-ray scanners for medical applications and non-destructive testing in the food industry.

Automated summary

The success of cadmium zinc telluride (CZT) detectors in room-temperature spectroscopic X-ray imaging is widely accepted. Different types of CZT materials with enhanced properties have been developed for various applications.