Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 37, Issue 3, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-6641/ac4b8a
Keywords
nanowires; ZnO; chemical vapor deposition (CVD); resistive switching; memristive devices; neuromorphic devices
Categories
Funding
- European project MEMQuD [20FUN06]
- EMPIR programme [20FUN06]
- European Union's Horizon 2020 research and innovation programme
- Compagnia di San Paolo Foundation
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This research reports on the fabrication and characterization of memristive devices based on ZnO nanowires. Single crystalline ZnO nanowires were synthesized by a bottom-up approach and were utilized to create electrochemical metallization memory cells. These single crystalline devices not only serve as building blocks for nanowire-based memristive and neuromorphic systems, but also provide a model system for studying the physicochemical processes underlying memristive functionalities.
Memristive and resistive switching devices are considered promising building blocks for the realization of artificial neural networks and neuromorphic systems. Besides conventional top-down memristive devices based on thin films, resistive switching devices based on nanowires (NWs) have attracted great attention, not only for the possibility of going beyond current scaling limitations of the top-down approach, but also as model systems for the localization and investigation of the physical mechanism of switching. This work reports on the fabrication of memristive devices based on ZnO NWs, from NW synthesis to single NW-based memristive cell fabrication and characterization. The bottom-up synthesis of ZnO NWs was performed by low-pressure chemical vapor deposition according to a self-seeding vapor-solid (VS) mechanism on a Pt substrate over large scale (similar to cm(2)), without the requirement of previous seed deposition. The grown ZnO NWs are single crystalline with wurtzite crystal structure and are vertically aligned respect to the growth substrate. Single NWs were then contacted by means of asymmetric contacts, with an electrochemically active and an electrochemically inert electrode, to form NW-based electrochemical metallization memory cells that show reproducible resistive switching behaviour and neuromorphic functionalities including short-term synaptic plasticity and paired pulse facilitation. Besides representing building blocks for NW-based memristive and neuromorphic systems, these single crystalline devices can be exploited as model systems to study physicochemical processing underlaying memristive functionalities thanks to the high localization of switching events on the ZnO crystalline surface.
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