Low temperature deposition of BiFeO3 films on Ti foils for piezoelectric applications

Predominantly (100)-oriented BiFeO3 films with excellent ferroelectric and piezoelectric properties were successfully fabricated on Ti foils via RF-magnetron sputtering at 450 degrees C. Well-saturated P-E loops with a high remnant polarization (P-r similar to 72 mu C/cm(2)) and a large built-in field (similar to 145 kV/cm) were observed in the BiFeO3 films. A large transverse piezoelectric coefficient (vertical bar e(31,f)vertical bar similar to 2.2 +/- 0.2 C/m(2)) and a decent dielectric property (epsilon(r) similar to 260-270, tan delta similar to 1.6-2.0%), together with a remarkable fatigue-resistance (similar to 1.1% loss of vertical bar e(31,f)vertical bar after 1.2 x 10(6) piezoelectric actuation cycles) were demonstrated in patterned BiFeO3-Ti cantilevers. These results indicate a great potential of BiFeO3 films as piezo-active components in metal-based micro-electro-mechanical systems (MEMS). (C) 2021 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Automated summary

BiFeO3 films with predominantly (100) orientation were successfully fabricated on Ti foils via RF-magnetron sputtering, showing excellent ferroelectric and piezoelectric properties suitable for metal-based MEMS.