4.7 Article

Improved silicon optical parameters at 25°C, 295 K and 300 K including temperature coefficients

Journal

PROGRESS IN PHOTOVOLTAICS
Volume 30, Issue 2, Pages 164-179

Publisher

WILEY
DOI: 10.1002/pip.3474

Keywords

silicon absorption coefficient; silicon optical properties; silicon refractive index

Funding

  1. Australian Renewable Energy Agency

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The author discusses the need for refinement in silicon's refractive index and absorption coefficient beyond 1200 nm, based on recent luminescent measurements. An updated dataset for lightly doped silicon is presented, providing optical parameters over a broader temperature range with temperature coefficients included to improve accuracy.
Although the author's earlier tabulations of silicon's refractive index and absorption coefficient over a wide range of wavelengths have found wide use, recent luminescent measurements have shown that refinement is needed at wavelengths beyond 1200 nm. An updated dataset is described for lightly doped silicon tabulated over the 250- to 1450-nm range in 10-nm increments at three temperatures, 25 degrees C, 295 K and 300 K, incorporating the most recent experimental results. Temperature coefficients are also included allowing reasonably accurate estimates of optical parameters over the much broader -24 degrees C to 200 degrees C range.

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