4.7 Article

Electrochemical degradation modes in bifacial silicon photovoltaic modules

Journal

PROGRESS IN PHOTOVOLTAICS
Volume 30, Issue 8, Pages 948-958

Publisher

WILEY
DOI: 10.1002/pip.3530

Keywords

bifacial; DuraMAT; PERC; reliability; silicon

Funding

  1. U.S. Department of Energy (Office of Science, Office of Basic Energy Sciences and Energy Efficiency and Renewable Energy, Solar Energy Technology Program) [32509]

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Motivated by the increasing deployment of bifacial monocrystalline-silicon photovoltaics, this study investigates the durability of various PV module packaging configurations with transparent coverings, highlighting degradation modes including shunting, enhanced recombination, and series resistance increases. The research shows that multiple potential-induced degradation and moisture-ingress degradation modes severely affect EVA-containing modules, while minimal degradation is observed in POE-containing modules under all stress conditions.
Motivated by the rapidly rising deployment of bifacial monocrystalline-silicon photovoltaics (PV), we investigate the durability of various PV module packaging configurations with transparent coverings on both the front and rear sides of the module. We use a series of bifacial passivated emitter and rear cell (p-PERC) mini-modules with systematically varying outer cover materials (glass/glass, G/G, or glass/transparent backsheet, G/TB) and encapsulant chemistries (poly [ethylene-co-vinyl acetate], EVA; or polyolefin, POE). We study degradation modes over 1,000 hours of combined damp heat (DH) exposure and high system voltages that can cause potential-induced degradation (PID) under positive, zero, or negative 1,000 V cell-to-frame bias. We analyze the degradation modes using a combination of current-voltage measurements, impedance spectroscopy, external quantum efficiency, and spatially resolved luminescence and thermal imaging. Our results highlight various types of degradation including shunting, enhanced recombination, and series resistance increases, and we use spatially resolved characterization to separately identify the localized effects. We show that multiple PID and moisture-ingress degradation modes severely affect EVA-containing modules, with previously reported PID processes under negative-bias DH and a unique observation of rear-side surface recombination in G/EVA/G modules under positive-bias DH. We observe significantly less degradation in POE-containing modules, where the G/POE/G configuration exhibits minimal degradation under all stress conditions that we employ.

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