4.7 Article

Synthesis, Crystal Structure, Theoretical, and Resistivity Study of BaUSe3

Journal

INORGANIC CHEMISTRY
Volume 55, Issue 15, Pages 7734-7738

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.inorgchem.6b01202

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Funding

  1. International Institute of Nanotechnology (IIN)
  2. GENCI-CCRT/CINES [x2014-085106]
  3. U.S. Department of Energy, Office of Basic Energy Sciences [DE-AC02-06CH11357]

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The black-colored compound BaUSe3 has been synthesized at 1173 K by a stoichiometric reaction of the elements in a CsCl flux. BaUSe3 crystallizes in the GdFeO3 structure type. There is no change in structure between 100 and 298 K. The U atoms in this structure are octahedrally connected to six Se atoms. Each octahedral unit shares all six corners with neighboring octahedra, forming a three-dimensional network. BaUSe3 can be charge balanced as Ba2+U4+(Se2-)(3). DFT electronic structure calculations found BaUSe3 to be antiferromagnetic in its ground state and to be a semiconductor with a band gap of 2.5 eV. The band gap is inconsistent with the black color of the material and with the small activation energy of 0.12(1) eV obtained from resistivity measurements. A UV-vis spectrum indicated that there was no band gap above 1 eV. It is possible that, for BaUSe3, intrinsic and extrinsic impurities from the flux create midgap states that lead to the experimentally measured narrow optical gap. More likely, BaUSe3 presents a challenge to DFT calculations as applied to 5f materials.

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