4.7 Article

(Cs6Cl)6Cs3[Ga53Se96]: A Unique Long Period-Stacking Structure of Layers Made from Ga2Se6 Dimers via Cis or Trans Intralayer Linking

Journal

INORGANIC CHEMISTRY
Volume 55, Issue 3, Pages 1014-1016

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.inorgchem.5b02846

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Funding

  1. National Natural Science Foundation of China [21225104, 21233009, 21301175, 21571020, 91422303]
  2. Natural Science Foundation of Fujian Province [2015J01071]

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The new compound (Cs6Cl)(6)Cs-3[Ga53Se96] with its own structure type has been discovered by high-temperature solid-state reactions. The compound features a unique long period-stacking structure of layers that are built by the commonly observed dimeric Ga2Se6 unit extending in cis or trans intralayer linking. Single-crystal X-ray diffraction analyses show the trigonal space group R (3) over barm (No. 166) and a = 11.990(5) angstrom, c = 50.012(4) angstrom, and V = 6226.5(6) angstrom 3. The UV-vis-near-IR spectrum reveals a wide band gap of 2.74 eV that agrees well with the electronic structure calculation.

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