Journal
INORGANIC CHEMISTRY
Volume 55, Issue 3, Pages 1014-1016Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.inorgchem.5b02846
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Funding
- National Natural Science Foundation of China [21225104, 21233009, 21301175, 21571020, 91422303]
- Natural Science Foundation of Fujian Province [2015J01071]
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The new compound (Cs6Cl)(6)Cs-3[Ga53Se96] with its own structure type has been discovered by high-temperature solid-state reactions. The compound features a unique long period-stacking structure of layers that are built by the commonly observed dimeric Ga2Se6 unit extending in cis or trans intralayer linking. Single-crystal X-ray diffraction analyses show the trigonal space group R (3) over barm (No. 166) and a = 11.990(5) angstrom, c = 50.012(4) angstrom, and V = 6226.5(6) angstrom 3. The UV-vis-near-IR spectrum reveals a wide band gap of 2.74 eV that agrees well with the electronic structure calculation.
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