Suppression of weak localization due to AlN interlayer in AlGaN/GaN 2DEG

We have conducted a comprehensive investigation of the magneto-transport properties of Al0.30Ga0.70N/GaN and Al0.30Ga0.70N/AlN/GaN based HEMT structure in terms of inelastic scattering time via weak localization (WL) measurement. Owing to 1 nm AlN interlayer, a small negative-magnetoresistance (MR) effect which appeared over the interval -0.10 T < B-perpendicular to <= 0.10 T is further suppressed to -0.040 T <= B-perpendicular to <= 0.040 T. Using HRXRD measurement and fitting our experimental magnetoresistance (MR) data with theoretical model, it has been analyzed that WL suppression in 2DEG is mainly due to the interlayer while contribution due to crystalline disorder is negligible. Different weak localization parameters like elastic scattering time tau(e) and inelastic scattering time tau(i) are extracted by fitting temperature dependent negative MR data using Hikami-Larkin-Nagaoka (HLN) model. A linear dependence of inelastic scattering rate (tau(-1)(i) proportional to T) with temperature is also observed up to temperature 15 K. Our combined experimental and modeled results demonstrate a significant role of AlN interlayer in suppressing the WL in AlGaN/GaN 2DEG system. Quantitative analysis within the framework of HLN model leads to the conclusion that AlN interlayer break the electronic phase coherence, decrease tau(i) and suppress the localization effect. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

By measuring the inelastic scattering time, we investigated the weak localization properties of the AlGaN/GaN system and found that the AlN interlayer plays a significant role in suppressing the weak localization phenomenon.