Giant dielectric response and relaxation behavior in (Tm plus Ta) co-doped TiO2 ceramics

Dielectric materials with huge dielectric constants are attracting attention due to the growing demand for microelectronics and high energy-storage devices. In this work, Tm + Ta co-doped TiO2 ceramics were prepared by a solid-state reaction (SSR) method, and the microstructure and dielectric behavior were investigated. A ultrahigh permittivity (epsilon(r) similar to 2.26 x 10(4)) and very low loss (tan delta similar to 0.011) are achieved at 1 kHz for (Tm0.5Ta0.5)(0.01)Ti0.99O2 ceramics. XPS analysis confirms that the high dielectric constant and low dielectric loss are attributed to the electron pinned defect dipole (EPDD) response formed by the coupling of Ti3+ and oxygen vacancies. In addition, impedance analysis and frequency dependent dielectric constant under a DC bias indicate that the presence of the internal barrier layer capacitance (IBLC) response and electrode response at low to medium frequencies (<10(6) Hz) also contribute significantly to the dielectric constant. The findings reported in this work provide valuable insights into the simultaneous realization of a low dielectric loss and high permittivity in Tm + Ta co-doped TiO2 ceramics and other related dielectric ceramics.

Automated summary

In this work, Tm + Ta co-doped TiO2 ceramics with ultrahigh permittivity and very low loss were prepared using a solid-state reaction method. The high dielectric constant and low dielectric loss were attributed to the electron pinned defect dipole response formed by the coupling of Ti3+ and oxygen vacancies. The impedance analysis and frequency dependent dielectric constant under a DC bias suggested that the internal barrier layer capacitance response and electrode response also contribute significantly to the dielectric constant.