Radiation Damage in (001) Diamond Induced by Phosphorus Ion Implantation

Microstructural evolution in ion-implanted and postannealed (001) diamond is investigated using transmission electron microscopy. For 150 keV P-31(+) ion implantation into diamond with a fluence of 1 x 10(15) cm(-2), an amorphous carbon interlayer about approximate to 80 nm thickness formed between damaged diamonds is observed. Postannealing at 1200 degrees C can recover some damaged diamond regions where the vacancy concentration is estimated below 3 x 10(22) cm(-3). However, graphitization from the amorphous carbon interlayer and the heavily damaged diamond regions with higher vacancy concentrations occurs to form an approximate to 85 nm-thick graphite layer after annealing.

Automated summary

Microstructural evolution in ion-implanted and postannealed (001) diamond was investigated using transmission electron microscopy. It was found that an amorphous carbon interlayer formed between damaged diamonds after ion implantation, and postannealing can recover some of the damaged regions while causing graphitization.