Electrical Properties of Selectively Deposited Graphene-Like Film on Silicon Oxide/Silicon Structures Preirradiated with Low Energy Electrons

Graphene-like films (GLFs) are selectively deposited on the silicon oxide/silicon structures preirradiated with electrons at various electron energies and irradiation doses. These films demonstrate high conductivity and are used as a gate material for metal-oxide-semiconductor (MOS)-based devices. It is shown that high-quality capacitance-voltage characteristics of the GLF-gated MOS structures can be obtained if both an energy and a dose are carefully tuned. Using the GLF-gated MOS as a pseudo-field effect transistor structure, a notable current modulation in the selectively grown GLF is observed.

Automated summary

Graphene-like films (GLFs) are selectively deposited on preirradiated silicon oxide/silicon structures with high conductivity, serving as gate material for metal-oxide-semiconductor (MOS) devices. By carefully tuning both the energy and dose, high-quality capacitance-voltage characteristics can be achieved in GLF-gated MOS structures. A notable current modulation in selectively grown GLFs is observed when using the GLF-gated MOS as a pseudo-field effect transistor structure.