4.4 Article

Electrical Properties of Selectively Deposited Graphene-Like Film on Silicon Oxide/Silicon Structures Preirradiated with Low Energy Electrons

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.202100208

Keywords

electron beam irradiation; graphene-like films; self-aligned gates; silicon oxide

Funding

  1. [075-00355-21-00]

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Graphene-like films (GLFs) are selectively deposited on preirradiated silicon oxide/silicon structures with high conductivity, serving as gate material for metal-oxide-semiconductor (MOS) devices. By carefully tuning both the energy and dose, high-quality capacitance-voltage characteristics can be achieved in GLF-gated MOS structures. A notable current modulation in selectively grown GLFs is observed when using the GLF-gated MOS as a pseudo-field effect transistor structure.
Graphene-like films (GLFs) are selectively deposited on the silicon oxide/silicon structures preirradiated with electrons at various electron energies and irradiation doses. These films demonstrate high conductivity and are used as a gate material for metal-oxide-semiconductor (MOS)-based devices. It is shown that high-quality capacitance-voltage characteristics of the GLF-gated MOS structures can be obtained if both an energy and a dose are carefully tuned. Using the GLF-gated MOS as a pseudo-field effect transistor structure, a notable current modulation in the selectively grown GLF is observed.

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