Simply equipped ε-Ga2O3 film/ZnO nanoparticle heterojunction for self-powered deep UV sensor

In this paper, a epsilon-Ga2O3 film/ZnO nanoparticle hybrid heterojunction deep ultraviolet (UV) photodetector is described for 254 nm wavelength sensing application. The constructed epsilon-Ga2O3/ZnO heterojunction photodetector can operate in dual modes which are power supply mode and self-powered mode. Under reverse 5 V bias with 254 nm light intensity of 500 mu W cm(-2), the photoresponsivity, specific detectivity and external quantum efficiency are 59.7 mA W-1, 7.83 x 10(12) Jones and 29.2%. At zero bias, the advanced epsilon-Ga2O3/ZnO photodetector performs decent self-powered photoelectrical properties with photo-to-dark current ratio of 1.28 x 10(5), on/off switching ratio of 3.22 x 10(4), rise/decay times of 523.1/31.7 ms, responsivity of 4.12 mA W-1 and detectivity of 2.24 x 10(12) Jones. The prominent photodetection performance lays a solid foundation for epsilon-Ga2O3/ZnO heterojunction in deep UV sensor application.

Automated summary

This paper describes the performance of an epsilon-Ga2O3 film/ZnO nanoparticle hybrid heterojunction deep UV photodetector for 254 nm wavelength sensing. The photodetector can operate in both power supply mode and self-powered mode, delivering excellent photoelectrical properties in each. The results lay a solid foundation for the application of epsilon-Ga2O3/ZnO heterojunction in deep UV sensors.