Strain-engineering in AlGaN/GaN HEMTs: impact of silicon nitride passivation layer on electrical performance

In this work, we present a physics-based analysis of two-dimensional electron gas (2DEG) sheet carrier density and other microwave characteristics such as transconductance and cutoff frequency of AlxGa1-xN/GaN high electron mobility transistors (HEMT). An accurate polarization-dependent charge control-based analysis is performed for microwave performance assessment in terms of current, transconductance, gate capacitances, and cutoff frequency of lattice-mismatched AlGaN/GaN HEMTs. The influence of stress on spontaneous and piezoelectric polarization is included in the simulation of an AlGaN/GaN HEMT. We have shown the change in threshold voltage (V-t) due to tensile and compressive strain with different gate lengths. Also, the influence of stress due to the change in nitride thickness is presented. Our simulation results for drain current, transconductance, and current-gain cutoff frequency for various gate length devices are calibrated and verified with experimental data over a wide range of gate and drain applied voltages, which are expected to be useful for microwave circuit design. The predicted transconductance, drain conductance, and operation frequency are quite close to the experimental data. The AlGaN/GaN heterostructure HEMTs with nitride passivation layers show great promise as a candidate in future high speed and high power applications.

Automated summary

This work presents a physics-based analysis of the 2DEG carrier density and microwave characteristics of AlxGa1-xN / GaN HEMTs, highlighting the influence of stress on HEMT performance. The results show that AlGaN / GaN heterostructure HEMTs have great potential for future high speed and high power applications.