Journal
INFRARED PHYSICS & TECHNOLOGY
Volume 75, Issue -, Pages 82-86Publisher
ELSEVIER
DOI: 10.1016/j.infrared.2015.12.012
Keywords
VO2/FTO; DC magnetron sputtering; Threshold voltage; Electric induced phase transition
Categories
Funding
- National High Technology Research and Development Program of China [2006AA03Z348]
- Foundation for Key Program of Ministry of Education China [207033]
- Key Science and Technology Research Project of Shanghai Committee, China [10ZZ94]
- Shanghai Talent Leading Plan, China [2011-026]
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A VO2 thin film has been prepared using a DC magnetron sputtering method and annealing on an F-doped SnO2 (FTO) conductive glass substrate. The FTO/VO2/FTO structure was fabricated using photolithography and a chemical etching process. The temperature dependence of the hysteresis loop for the FTO/VO2/FTO structure has been analyzed. The threshold voltage decreases with increasing temperature, with a value of 9.2 V at 20 degrees C. The maximum transmission modulation value of the FTO/VO2/FTO structure is 31.4% under various temperatures and voltages. Optical modulation can be realized in the structure by applying an electric field. (C) 2016 Elsevier B.V. All rights reserved.
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