4.6 Article

Thermally stable inverted organic light-emitting diodes using Ag-doped 4,7-diphenyl-1,10-phenanthroline as an electron injection layer

Journal

ORGANIC ELECTRONICS
Volume 99, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.orgel.2021.106307

Keywords

Silver-doped; Inverted organic light-emitting diodes; Grazing incidence small angle X-ray scattering; Thermal stability; Annealing

Funding

  1. National Natural Science Foundation of China [61775130, 11974236]
  2. Science and Technology Commission of Shanghai Municipality Program [19DZ2281000, 17DZ2281700]
  3. Hong Kong Research Grants Council [PolyU 15305320]
  4. Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials [2019B121205002]
  5. Hong Kong Polytechnic University [1-ZE1C]
  6. Research Institute for Smart Energy (RISE)
  7. Endowed Professorship in Energy [847S]

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The study found that doping silver into Bphen can improve the thermal stability of IOLEDs, and the Ag dopant exhibits stable electrical properties at 100 degrees Celsius, in contrast to Cs2CO3. A new strategy is demonstrated to enhance the performance of IOLEDs operated under high temperature.
The thermal stability of organic functional materials affects the performance and lifetime of organic light-emitting diodes (OLEDs). We have developed a thermally stable inverted OLEDs (IOLEDs) by employing silver (Ag) doped into 4,7-diphenyl-1,10-phenanthroline (Bphen) as an n-type doped electron injection layer (EIL). We found that the formation of Ag complexes by coordination reaction could enhance the thermal stability and produce an asymmetric diffraction pattern based on an analysis of grazing incidence small angle X-ray scattering. Interestingly, with the annealing temperature increasing to 100 degrees C, the electrical properties of electron-only cells show differentiated phenomenon that the current density based on Ag dopant remains basically unchanged, which is opposite to Cs2CO3 dopant. In addition, at the high temperature of 100 degrees C, the IOLEDs with Cs2CO3 doped Bphen as an EIL was damaged completely, while the Ag dopant-based devices still maintained good photoelectrical characteristics. Finally, we have demonstrated that the optimized IOLEDs achieved a 40.3% enhancement in current efficiency compared to the conventional device. This work provides a new strategy to increase the thermal stability and performance for the application of IOLEDs operated under high temperature.

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