4.6 Article

Combining in-situ formed PbI2 passivation and secondary passivation for highly efficient and stable planar heterojunction perovskite solar cells

Journal

ORGANIC ELECTRONICS
Volume 100, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.orgel.2021.106361

Keywords

Perovskite solar cells; In-situPbI(2) formation; Secondary passivation; High efficiency; Good stability

Funding

  1. National Natural Science Foundation of China [61704131]
  2. Key Research and Development Pro-gram of Shaanxi Province [2020GY-310]

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The rapid development of organic-inorganic hybrid perovskite solar cells is attributed to their high light absorption coefficient, tunable band gap, and low fabrication cost, with thin film formation and properties playing a crucial role in device performance. This study focused on controlled PbI2 formation during thin film evolution, exploring its effects on film properties and passivation for enhancing photovoltaic device performance. By further passivating with 2D perovskite, the devices achieved a higher PCE of 21.1% and excellent Voc of 1.14 V.
Since the power conversion efficiencies of organic-inorganic hybrid perovskite solar cells have a rapid devel-opment due to their high light absorption coefficient, tunable band gap and low fabrication cost, they have received much attention. The thin film formation and properties have significant effects on the final device performance. While how to control the thin film evolution and introduce film passivation is a critical issue to improve the device efficiency. In this study, we studied the controlled in-situ PbI2 formation during the thin film evolution, and its effect on thin film properties, as well as their passivation effects on the photovoltaic device performance. The final thin film properties are critically related with the precursor used and chlorine inclusion could change the final thin film compositions, and affect the solar cell performance. We further perform a secondary passivation by reacting the excess PbI2 with large organic cation to form 2D perovskite. Based on in-situ PbI2 passivation and secondary 2D perovskite passivation, the devices exhibit a higher PCE of 21.1% and excellent Voc of 1.14 V.

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