Journal
OPTICS LETTERS
Volume 47, Issue 4, Pages 890-893Publisher
Optica Publishing Group
DOI: 10.1364/OL.444485
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Funding
- National Natural Science Foundation of China [62075126, 62005161, 91850203, 11721404]
- Chenguang Program - Shanghai Education Development Foundation
- Shanghai Municipal Education Commission [19CG12]
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In this study, a 3-5 μm mid-infrared (MIR) SESAM is created by engineering an InAs/GaSb type-II superlattice. Using this SESAM, a SESAM mode-locked Er:ZBLAN fiber laser at 3.5 μm is realized, delivering MIR ultrashort pulses with high long-term stability.
Semiconductor saturable absorber mirrors (SESAMs) have been regarded as a revolutionary technology for ultrafast mode-locked lasers, producing numerous landmark laser breakthroughs. However, the operating wavelength of existing SESAMs is limited to less than 3 mu m. In this study, we create a 3-5 mu m mid-infrared (MIR) SESAM by engineering an InAs/GaSb type-II superlattice. Bandgap engineering and the strong coupling between potential wells in a superlattice enable a broadband response of saturable absorption in the 3-5 mu m spectral range. Using the fabricated SESAM, we realize a SESAM mode-locked Er:ZBLAN fiber laser at 3.5 mu m, which delivers MIR ultrashort pulses with high long-term stability. The breakthrough of SESAM fabrication in the MIR will promote the development of MIR ultrafast coherent sources and related application fields. (C) 2022 Optica Publishing Group
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