Nonvolatile modulation of luminescence in perovskite oxide thin films by ferroelectric gating

Nonvolatile and giant modulation of luminescence can be realized by the ferroelectric gating effect in a Ga3+/Pr3+ co-doped BaTiO3 ultra-thin film epitaxially grown on a [Pb(Mg1/3Nb2/3)O-3](0.7)-[PbTiO3](0.3) single-crystallized substrate. The change behavior of the emission intensity matches that of the ferroelectric polarization hysteresis loop with a giant enhancement of over 13 times with negative polarization orientation. The interaction of O2- at the O2p orbital in the valence band and Pr3+ with injected holes by the ferroelectric gating effect promotes the formation of excited state O-, Pr4+, or Pr3+q. This ferroelectric gating method can promote the development of controllable photo-, electroluminescent, and other optoelectronic devices for display, sensing, communication, and so on. (C) 2022 Optica Publishing Group

Automated summary

Nonvolatile and giant modulation of luminescence can be achieved through the ferroelectric gating effect in a Ga3+/Pr3+ co-doped BaTiO3 ultra-thin film grown on a specific substrate. The change in emission intensity matches the ferroelectric polarization hysteresis loop, showing a significant enhancement when the polarization is negative. The interaction between O2- and Pr3+ promotes the formation of excited states. This method has potential applications in the development of controllable optoelectronic devices.