High brightness silicon nanocrystal white light-emitting diode with luminance of 2060 cd/m2

High brightness Si nanocrystal white light-emitting diodes (WLED) based on differentially passivated silicon nanocrystals (SiNCs) are reported. The active layer was made by mixing freestanding SiNCs with hydrogen silsesquioxane, followed by annealing at moderately high temperatures, which finally led to a continuous spectral light emission covering red, green and blue regimes. The photoluminescence quantum yield (PLQY) of the active layer was 11.4%. The SiNC WLED was composed of a front electrode, electron transfer layer, front charge confinement layer, highly luminescent active layer, rear charge confinement layer, hole transfer layer, textured p-type Si substrate and aluminum rear electrode from top to bottom. The peak luminance of the SiNC WLED achieved was 2060 cd/m(2). The turn-on voltage was 3.7 V. The chromaticity of the SiNC WLED indicated white light emission that could be adjusted by changing the annealing temperature of the active layer with color temperatures ranging from 3686 to 5291 K. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Automated summary

High brightness Si nanocrystal white light-emitting diodes based on differentially passivated silicon nanocrystals were reported, with a photoluminescence quantum yield of 11.4% and a peak luminance of 2060 cd/m². The color temperature of the emitted white light could be adjusted within a range from 3686 to 5291 K.