Up to 300 K lasing with GeSn-On-Insulator microdisk resonators

GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn. This is achieved in microdisk resonators fabricated on a GeSn-On-Insulator platform by combining strain engineering with a thick layer of high Sn content GeSn. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Automated summary

GeSn alloys are highly promising materials for the integration of CMOS-compatible lasers using Group-IV materials. This study demonstrates room temperature lasing at up to 300 K by utilizing GeSn microdisk resonators fabricated on a GeSn-On-Insulator platform through strain engineering and a thick layer of high Sn content GeSn.