Journal
OPTICS EXPRESS
Volume 29, Issue 25, Pages 41356-41362Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.437507
Keywords
-
Categories
Ask authors/readers for more resources
The temperature-dependent optical properties of PECVD deposited amorphous silicon films were investigated, with heating rates over 2300 K/s used to shift the onset of solid-phase crystallization above 1110 K for examination. The study includes details on the experimental setup, procedure, simulation methods, and material-specific data.
The temperature-dependent optical properties of PECVD deposited amorphous silicon films are determined for radiation wavelengths of 1000 nm up to 2000 nm in a temperature range of up to 1110 K. The measurements are performed at heating rates of over 2300 K/s in order to shift the onset of solid-phase crystallization of the amorphous material to temperatures above 1110 K and to make the optical properties of amorphous silicon accessible for examination. In this work, the laser-based measurement setup, the experimental procedure, the simulation methods, and the resulting material-specific data are shown. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available