Journal
OPTICAL MATERIALS
Volume 122, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.optmat.2021.111783
Keywords
Garnet crystal; Light yield; Luminescence; Scintillation
Categories
Funding
- Thailand Research Fund [TRG6280007]
- GIMRT Program of the Institute for Materials Research Tohoku University [19K0521]
- Thailand Science Research and Innovation (TSRI) of the King Mongkut's University of Technology Thonburi [64A306000048]
- Czech Ministry of Education, Youth and Sports [SOLID21 CZ.02.1.01/0.0/0.0/16_019/0000760]
- Czech Science foundation [21-17731S]
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Mo co-doped Y0.8Gd2.2(Al5-xGax)O12:Ce multicomponent garnet crystals were grown by the micro-pulling down method and their luminescence and scintillation properties were investigated. The temperature dependences of radioluminescence yield and photoluminescence decay time were measured to study the temperature stability of these crystals, with a decrease of radioluminescence yield at low temperature observed in correlation with the appearance of large thermoluminescence peaks.
Mo co-doped Y0.8Gd2.2(Al5-xGax)O12:Ce (x = 2.6 and 3) multicomponent garnet crystals were grown by the micro-pulling down method and the luminescence and scintillation properties were investigated. The temperature dependences of radioluminescence yield and photoluminescence decay time were measured to investigate the temperature stability of these crystals. Under excitation with 662 keV gamma rays at room temperature, Y0.8Gd2.2(Al2.4Ga2.6)O12:Ce,Mo shows a higher light yield of 53,800 ph/MeV whereas Y0.8Gd2.2(Al2Ga3)O12:Ce, Mo shows a faster scintillation decay times of 50 ns (56%) + 275 ns (44%). A decrease of radioluminescence yield at low temperature observed in correlation with an appearance of the large thermoluminescence peaks can be attributed to the localization of charge carriers at shallow traps.
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