Journal
OPTICAL MATERIALS
Volume 120, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.optmat.2021.111448
Keywords
InGaN; Micro-LED; PL; EL; Leakage current; Photocurrent
Categories
Funding
- Ministry of Knowledge Economy (MKE, Korea) under the Basic Science Research Program through the National Research Foundation of Korea (NRRF) - Ministry of Education [2017R1D1A3A03000947]
- Kongju National University
- National Research Foundation of Korea [2017R1D1A3A03000947] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This study systematically analyzes the correlation and detailed mechanism between photoluminescence and electroluminescence to provide a clear path for all-optical inspection of light emitting diodes.
Accurately predicting the peak wavelength and intensity of the electroluminescence spectrum through the photoluminescence method which can be measured without connecting electrodes is not only practically important for the development of micro-LEDs that cannot be fully inspected for device development, but there is also a fundamental importance in understanding the light emitting mechanism of the LEDs. In this study, the correlation and detailed mechanism between PL and EL are systematically analyzed by considering the effects of carrier escape, carrier accumulation, applied bias, leakage current, incident light wavelength and light absorption in order to provide a clear path for all-optical inspection of light emitting diodes and complete understanding of the luminescence mechanism in GaN-related quantum wells.
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