Reduced defect recovery in self-ion damaged W due to simultaneous deuterium exposure during annealing

Deuterium (D) plasma exposure during annealing of self-ion damaged tungsten (W) is shown to exhibit reduced defect recovery when compared to annealing without D plasma exposure. In these experiments, samples were first damaged with 20 MeV W ions. Next, samples were annealed either with or without simultaneous D-2 plasma exposure. The simultaneous annealed samples were first decorated by D-2 plasma at 383 K prior to ramping up to an annealing temperature of 473, 573, 673, or 773 K and held for 1 h with concurrent plasma exposure. The vacuum annealed samples each had a corresponding temperature history but without D-2 plasma treatment. Finally, all samples were exposed to D-2 plasma at 383 K to decorate any remaining defects. Nuclear reaction analysis and thermal desorption spectroscopy (TDS) shows that the simultaneous plasma-exposed and annealed samples exhibited virtually no defect recovery at annealing temperatures of up to 673 K, and had higher D retention than found in the vacuum annealed samples. TDS results indicate that only the lowest detrapping energy defects recover at an 773 K anneal for the simultaneous plasma annealed samples, while the vacuum annealed samples showed defect recovery at all anneal temperatures. This experiment clearly demonstrates that D occupied defects can significantly reduce or eliminate defect annealing in W, and is consistent with the existence of synergistic plasma exposure/displacement damage effects in fusion-energy relevant plasma facing materials.

Automated summary

Deuterium plasma exposure during annealing of self-ion damaged tungsten (W) leads to reduced defect recovery when compared to annealing without deuterium plasma exposure. This experiment demonstrates that deuterium-occupied defects can significantly decrease or eliminate defect annealing in tungsten.