Strain tailored thermodynamic stability, electronic transitions, and optoelectronic properties of III (In, Ga and Al)-nitride monolayers

The thermodynamic stability of III-nitride monolayers is calculated using the phonon band structure. Electronic properties are computed using the generalized gradient approximation-Perdew-Burke-Ernzerhof exchange-correlation potentials, which show the semiconducting behavior with bandgap 0.59 eV, 2.034 eV, and 2.906 eV for InN, GaN, and AlN monolayers, respectively. The biaxial tensile and compressive strains are used as external stimuli to understand their impact on the optoelectronic properties of these monolayers. The thermodynamic stability of strained monolayers is investigated to explore the maximum possible strains, i.e. flexibility limit, these monolayers can sustain. These monolayers are more sensitive to compressive strains, showing thermodynamic instability even at 1% compressive strain for all the considered monolayers. Further, the III-nitride monolayers are more robust with the tensile strain. InN, GaN, and AlN monolayers can sustain up to 4%, 16%, and 18% tensile strain, respectively. More interestingly, the electronic transitions, such as direct to indirect and semiconducting to metallic, are noticed with strain in the considered monolayers. The optical properties also exhibit strong strain dependency at the different transition points.

Automated summary

The thermodynamic stability, electronic properties, and optical properties of III-nitride monolayers under strain are investigated using phonon band structure calculations. The results show that these monolayers are more sensitive to compressive strain and exhibit higher tensile strain tolerance.