Enhancement in external quantum efficiency of light-emitting diode based on colloidal silicon nanocrystals

Herein, we report an enhanced red emission from colloidal silicon nanocrystals (c-Si NCs) solution-processed light-emitting diode. c-Si NCs were synthesized by facile femtosecond laser ablation. Based on the structural characterization and opto-electrics properties analysis, both photoluminescence and electroluminescence arise from the radiative recombination of carriers due to quantum confined effect. The optical power density and highest external quantum efficiency have been obtained to be 0.79 mW cm(-2) and similar to 6.6%, respectively. These results indicate that Si NCs are very attractive as a potential optical source for future integrated chips.

Automated summary

In this study, enhanced red emission from colloidal silicon nanocrystals (c-Si NCs) solution-processed light-emitting diode was reported. The c-Si NCs were synthesized by facile femtosecond laser ablation. Both photoluminescence and electroluminescence were found to arise from the radiative recombination of carriers due to quantum confined effect. The optical power density and highest external quantum efficiency obtained were 0.79 mW cm(-2) and around 6.6%, respectively, indicating the potential of Si NCs as an attractive optical source for future integrated chips.