4.8 Article

Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy

Related references

Note: Only part of the references are listed.
Review Nanoscience & Nanotechnology

Wake-Up Effect in HfO2-Based Ferroelectric Films

Pengfei Jiang et al.

Summary: This paper presents the recent developments in the wake-up effect of doped HfO2-based films, discussing the influence of different dopants and deposition processes on the wake-up effect. It highlights the significant impact of the interface properties between the electrode and ferroelectric layer on the characteristics of the wake-up effect, and proposes methods to optimize and control this effect.

ADVANCED ELECTRONIC MATERIALS (2021)

Article Physics, Multidisciplinary

Two-Dimensional Antiferroelectric Tunnel Junction

Jun Ding et al.

Summary: The recent discovery of two-dimensional ferroelectric materials has opened up a new route for realizing tunnel junctions with new functionalities and nanoscale dimensions. Using first-principles calculations, it has been demonstrated that bilayer In2X3 barriers exhibit stable ferroelectric and antiferroelectric states separated by sizable energy barriers, enabling nonvolatile switching between these states. Quantum-mechanical modeling predicts giant tunneling electroresistance effects and multiple nonvolatile resistance states in 2D AFTJs, suggesting the potential for high-density nanoscale memory devices.

PHYSICAL REVIEW LETTERS (2021)

Article Chemistry, Physical

2D ferroelectric devices: working principles and research progress

Minghao Liu et al.

Summary: Two-dimensional ferroelectric materials are considered promising for high-performance nanoelectronic devices due to their bistable and switchable polarization states which provide non-volatility, high storage density, low energy cost, and short response time. This mini review discusses the mechanism and operation principles of ferroelectric devices and summarizes the latest research progress on electronic devices based on 2D ferroelectrics, providing perspectives for future research and development directions in various fields. This overview aims to highlight the application of 2D ferroelectrics in electronic devices.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2021)

Review Physics, Applied

Ferroic tunnel junctions and their application in neuromorphic networks

Rui Guo et al.

APPLIED PHYSICS REVIEWS (2020)

Article Engineering, Electrical & Electronic

The Past, the Present, and the Future of Ferroelectric Memories

T. Mikolajick et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

Article Multidisciplinary Sciences

Enhanced ferroelectricity in ultrathin films grown directly on silicon

Suraj S. Cheema et al.

NATURE (2020)

Article Engineering, Electrical & Electronic

Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction

Junghyeon Hwang et al.

IEEE ELECTRON DEVICE LETTERS (2020)

Article Engineering, Electrical & Electronic

Low-power linear computation using nonlinear ferroelectric tunnel junction memristors

Radu Berdan et al.

NATURE ELECTRONICS (2020)

Review Materials Science, Multidisciplinary

Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices

Min Hyuk Park et al.

JOURNAL OF MATERIALS CHEMISTRY C (2020)

Article Chemistry, Multidisciplinary

Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering

Terence Mittmann et al.

ADVANCED MATERIALS INTERFACES (2019)

Article Engineering, Electrical & Electronic

Improved Endurance of HfO2-Based Metal-Ferroelectric-Insulator-Silicon Structure by High-Pressure Hydrogen Annealing

Seungyeol Oh et al.

IEEE ELECTRON DEVICE LETTERS (2019)

Article Engineering, Electrical & Electronic

Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

Rongrong Cao et al.

IEEE ELECTRON DEVICE LETTERS (2019)

Review Physics, Applied

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

Uwe Schroeder et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2019)

Article Engineering, Electrical & Electronic

Ferroelectric HfO2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process

Masaharu Kobayashi et al.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)

Article Engineering, Electrical & Electronic

Pulse Switching Study on the HfZrO Ferroelectric Films With High Pressure Annealing

Taeho Kim et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)

Article Engineering, Electrical & Electronic

Impact of RTN on Pattern Recognition Accuracy of RRAM-Based Synaptic Neural Network

Zheng Chai et al.

IEEE ELECTRON DEVICE LETTERS (2018)

Article Multidisciplinary Sciences

In situ click chemistry generation of cyclooxygenase-2 inhibitors

Atul Bhardwaj et al.

NATURE COMMUNICATIONS (2017)

Article Chemistry, Multidisciplinary

Physical Mechanisms behind the Field-Cycling Behavior of HfO2-Based Ferroelectric Capacitors

Milan Pesic et al.

ADVANCED FUNCTIONAL MATERIALS (2016)

Article Materials Science, Multidisciplinary

Ferroelectricity in undoped-HfO2 thin films induced by deposition temperature control during atomic layer deposition

K. D. Kim et al.

JOURNAL OF MATERIALS CHEMISTRY C (2016)

Article Chemistry, Multidisciplinary

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

Min Hyuk Park et al.

ADVANCED MATERIALS (2015)

Article Physics, Applied

Ferroelectricity in undoped hafnium oxide

Patrick Polakowski et al.

APPLIED PHYSICS LETTERS (2015)

Article Engineering, Electrical & Electronic

A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State

Francesco Maria Puglisi et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)

Review Multidisciplinary Sciences

Ferroelectric tunnel junctions for information storage and processing

Vincent Garcia et al.

NATURE COMMUNICATIONS (2014)

Article Multidisciplinary Sciences

Evidence for interacting two-level systems from the 1/f noise of a superconducting resonator

J. Burnett et al.

NATURE COMMUNICATIONS (2014)

Review Nanoscience & Nanotechnology

Low-frequency 1/f noise in graphene devices

Alexander A. Balandin

NATURE NANOTECHNOLOGY (2013)

Article Engineering, Electrical & Electronic

RTS noise characterization of HfOx RRAM in high resistive state

Francesco M. Puglisi et al.

SOLID-STATE ELECTRONICS (2013)

Article Chemistry, Multidisciplinary

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

Stefan Mueller et al.

ADVANCED FUNCTIONAL MATERIALS (2012)

Proceedings Paper Electrochemistry

Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare

E. Simoen et al.

MICROELECTRONICS TECHNOLOGY AND DEVICES - SBMICRO 2011 (2011)

Article Chemistry, Multidisciplinary

Ferroelectric Field Effect Transistors for Memory Applications

Jason Hoffman et al.

ADVANCED MATERIALS (2010)

Article Engineering, Electrical & Electronic

Conduction and Low-Frequency Noise Analysis in Al/α-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices

Jung-Kyu Lee et al.

IEEE ELECTRON DEVICE LETTERS (2010)

Article Chemistry, Physical

Intrinsic nanocrystalline grain-boundary and oxygen atom vacancy defects in ZrO2 and HfO2

G. Lucovsky et al.

RADIATION PHYSICS AND CHEMISTRY (2006)

Article Physics, Applied

Defect energy levels in HfO2 high-dielectric-constant gate oxide -: art. no. 183505

K Xiong et al.

APPLIED PHYSICS LETTERS (2005)

Article Physics, Applied

Behavior of hydrogen in high dielectric constant oxide gate insulators

PW Peacock et al.

APPLIED PHYSICS LETTERS (2003)

Article Engineering, Electrical & Electronic

Noise model of gate-leakage current in ultrathin oxide MOSFETs

J Lee et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)

Article Engineering, Electrical & Electronic

Low frequency current noise in unstressed/stressed thin oxide metal-oxide-semiconductor capacitors

F Crupi et al.

SOLID-STATE ELECTRONICS (2002)