4.8 Article

Alloy electrode engineering in memristors for emulating the biological synapse

Related references

Note: Only part of the references are listed.
Review Chemistry, Physical

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

Tuo Shi et al.

Summary: Resistive switching devices are emerging devices with advantages of simple structure, low power consumption, high speed, and good scalability, primarily attributed to the formation of conductive filaments. Integration in a crossbar structure allows for further exploration of various applications.

SMALL STRUCTURES (2021)

Review Chemistry, Multidisciplinary

The Future of Memristors: Materials Engineering and Neural Networks

Kaixuan Sun et al.

Summary: This article reviews the applications and development of memristors in the field of neural networks, pointing out that memristor architecture is expected to become an alternative to the von Neumann architecture and address the challenges of the neural network and big data era.

ADVANCED FUNCTIONAL MATERIALS (2021)

Article Multidisciplinary Sciences

U1 snRNP regulates cancer cell migration and invasion in vitro

Jung-Min Oh et al.

NATURE COMMUNICATIONS (2020)

Editorial Material Nanoscience & Nanotechnology

Memristors with alloyed electrodes

Ilia Valov et al.

NATURE NANOTECHNOLOGY (2020)

Review Materials Science, Multidisciplinary

Memory materials and devices: From concept to application

Zhenhan Zhang et al.

INFOMAT (2020)

Article Chemistry, Multidisciplinary

Silver-Adapted Diffusive Memristor Based on Organic Nitrogen-Doped Graphene Oxide Quantum Dots (N-GOQDs) for Artificial Biosynapse Applications

Andrey Sergeevich Sokolov et al.

ADVANCED FUNCTIONAL MATERIALS (2019)

Article Nanoscience & Nanotechnology

Analog Synaptic Behavior of a Silicon Nitride Memristor

Sungjun Kim et al.

ACS APPLIED MATERIALS & INTERFACES (2017)

Article Multidisciplinary Sciences

Self-Adaptive Spike-Time-Dependent Plasticity of Metal-Oxide Memristors

M. Prezioso et al.

SCIENTIFIC REPORTS (2016)

Article Engineering, Electrical & Electronic

Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory

Chi Cun Kuo et al.

IEEE ELECTRON DEVICE LETTERS (2015)

Review Materials Science, Multidisciplinary

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F. Pan et al.

MATERIALS SCIENCE & ENGINEERING R-REPORTS (2014)

Review Nanoscience & Nanotechnology

Memristive devices for computing

J. Joshua Yang et al.

NATURE NANOTECHNOLOGY (2013)

Review Neurosciences

STDP and STDP variations with memristors for spiking neuromorphic learning systems

T. Serrano-Gotarredona et al.

FRONTIERS IN NEUROSCIENCE (2013)

Review Chemistry, Multidisciplinary

Atomic Switch: Atom/Ion Movement Controlled Devices for Beyond Von-Neumann Computers

Tsuyoshi Hasegawa et al.

ADVANCED MATERIALS (2012)

Article Chemistry, Multidisciplinary

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

Sung Hyun Jo et al.

NANO LETTERS (2010)

Article Chemistry, Multidisciplinary

Programmable Resistance Switching in Nanoscale Two-Terminal Devices

Sung Hyun Jo et al.

NANO LETTERS (2009)

Article Electrochemistry

Galvanic corrosion of aluminium-copper model alloys

Jonathan Drac et al.

ELECTROCHIMICA ACTA (2007)

Review Neurosciences

Neuronal calcium sensor proteins: generating diversity in neuronal Ca2+ signalling

Robert D. Burgoyne

NATURE REVIEWS NEUROSCIENCE (2007)

Article Nanoscience & Nanotechnology

Alloying of immiscible phases in wire-drawn Cu-Ag filamentary composites

S Ohsaki et al.

SCRIPTA MATERIALIA (2003)

Review Neurosciences

Dendritic integration of excitatory synaptic input

JC Magee

NATURE REVIEWS NEUROSCIENCE (2000)