Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS

Memristor devices that exhibit high integration density, fast speed, and low power consumption are candidates for neuromorphic devices. Here, we demonstrate a filament-based memristor using p-type SnS as the resistive switching material, exhibiting superlative metrics such as a switching voltage similar to 0.2 V, a switching speed faster than 1.5 ns, high endurance switching cycles, and an ultralarge on/off ratio of 10(8). The device exhibits a power consumption as low as similar to 100 fJ per switch. Chip-level simulations of the memristor based on 32 x 32 high-density crossbar arrays with 50 nm feature size reveal on-chip learning accuracy of 87.76% (close to the ideal software accuracy 90%) for CIFAR-10 image classifications. The ultrafast and low energy switching of p-type SnS compared to n-type transition metal dichalcogenides is attributed to the presence of cation vacancies and van der Waals gap that lower the activation barrier for Ag ion migration.

Automated summary

The study demonstrates a filament-based memristor using p-type SnS as the resistive switching material, exhibiting superlative metrics such as low power consumption, fast switching speed, high endurance switching cycles, and a large on/off ratio. Chip-level simulations reveal an on-chip learning accuracy of 87.76% for image classifications, attributed to the ultrafast and low energy switching of p-type SnS compared to n-type transition metal dichalcogenides.