Low-Threshold Blue Quasi-2D Perovskite Laser through Domain Distribution Control

Quasi-2D perovskites, composed of self-organized quantum well structures, are emerging as gain materials for laser applications. Here we investigate the influence of domain distribution on the laser emission of CsPbCl1.5Br1.5-based quasi-2D perovskites. The use of 2,2-diphenylethylammonium bromide (DPEABr) as a ligand enables the formation of quasi-2D film with a large-n-dominated narrow domain distribution. Due to the reduced content of small-n domains, the incomplete energy transfer from small-n to large-n domains can be greatly addressed. Moreover, the photoinduced carriers can be concentrated on most of the large-n domains to reduce the local carrier density, thereby suppressing the Auger recombination. By controlling the domain distribution, we achieve blue amplified spontaneous emission and single-mode vertical-cavity surface-emitting lasing with low thresholds of 6.5 and 9.2 mu J cm(-2), respectively. This work provides a guideline to design the domain distribution to realize low-threshold multicolor perovskite lasers.

Automated summary

Quasi-2D perovskites composed of self-organized quantum well structures have shown promise as gain materials for laser applications. This study investigates the impact of domain distribution on the laser emission of CsPbCl1.5Br1.5-based quasi-2D perovskites. Through the use of 2,2-diphenylethylammonium bromide as a ligand, a quasi-2D film with a narrow domain distribution dominated by large-n domains is formed. This reduces the content of small-n domains and improves energy transfer. By controlling the domain distribution, blue amplified spontaneous emission and single-mode vertical-cavity surface-emitting lasing with low thresholds are achieved.