Field-Dependent Band Structure Measurements in Two-Dimensional Heterostructures

In electronic and optoelectronic devices made from van der Waals heterostructures, electric fields can induce substantial band structure changes which are crucial to device operation but cannot usually be directly measured. Here, we use spatially resolved angle-resolved photoemission spectroscopy to monitor changes in band alignment of the component layers, corresponding to band structure changes of the composite heterostructure system, that are produced by electrostatic gating. Our devices comprise graphene on a monolayer semiconductor, WSe2 or MoSe2, atop a boron nitride dielectric and a graphite gate. Applying a gate voltage creates an electric field that shifts the semiconductor bands relative to those in the graphene by up to 0.2 eV. The results can be understood in simple terms by assuming that the materials do not hybridize.

Automated summary

In this study, spatially resolved angle-resolved photoemission spectroscopy was used to monitor band structure changes in van der Waals heterostructures induced by electric fields. The results show that applying a gate voltage can shift the semiconductor bands relative to those in graphene by up to 0.2 eV.