Journal
NANO LETTERS
Volume 21, Issue 19, Pages 8119-8125Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.1c02564
Keywords
nitrogen-vacancy color centers; silicon carbide; resonant excitation; spin polarization; electron-phonon coupling
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Funding
- Deutsche Forschungsgemeinschaft (DFG) [SPP 1601]
- Transregional Collaborative Research Center TRR 142 [231447078]
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The nitrogen-vacancy (NV) center in 3C-SiC, akin to the NV center in diamond, has competitive properties and significant technological advantages for qubit applications. Its strong variation of the zero-field splitting also allows for nanoscale thermal sensing applications.
The nitrogen-vacancy (NV) center in 3C-SiC, the analog of the NV center in diamond, has recently emerged as a solid-state qubit with competitive properties and significant technological advantages. Combining first-principles calculations and magnetic resonance spectroscopy, we provide thorough insight into its magneto-optical properties. By applying resonantly excited electron paramagnetic resonance spectroscopy, we identified the zerophonon absorption line of the (3)A(2) -> E-3 transition at 1289 nm (within the telecom 0-band) and measured its phonon sideband, the analysis of which reveals a Huang-Rhys factor of S = 2.85 and a Debye-Waller factor of 5.8%. The low-temperature spin-lattice relaxation time was found to be exceptionally long (T-1 = 17 s at 4 K). All these properties make NV in 3C-SiC a strong competitor for qubit applications. In addition, the strong variation of the zero- field splitting in the range 4-380 K allows its application for nanoscale thermal sensing.
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