Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory

We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid bilayer was explored for developing flexible resistive random access memory (RRAM) devices. A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 0.3-0.6 wt % PVP-GQD, V-f changed from 2.27-2.74 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. In addition, as the PVP-GQD concentration increased, the depth of the interfacial defect decreased, and confirmed the repetition of appropriate electrical properties through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.

Automated summary

Flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD layer were investigated for developing resistive random access memory (RRAM) devices. The resistive switching behavior of composites and hybrid bilayers based on graphene quantum dots and HfOx was explored to improve electrical properties. Increasing the concentration of PVP-GQD led to changes in V-f and decreased the depth of interfacial defects, facilitating the electrophoresis of Al+ ions to the PVP GQD layer and HfOx thin film.