Neutron-induced effects on a self-refresh DRAM

The field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a selfrefresh DRAM under neutron irradiation. The neutron-induced effects were investigated and characterised by event cross sections, soft-error rate, and bitmaps evaluations, leading to an identification of permanent and temporary stuck cells, single-bit upsets, and block errors. Block errors were identified in different patterns with dependency in the addressing order, leading to up to two thousand faulty words per event, representing a real threat from a user perspective, especially in critical applications. An analysis of the damaged cells' retention time was performed, showing a difference in the efficiency of the self-refresh mechanism and a read operation. Also, a correlation of the fault mechanism that generates both single-bit upsets and stuck bits is proposed. Postirradiation high-temperature annealing procedures were applied, showing a recovery behaviour on the damaged cells.

Automated summary

The study investigated the response of a self-refresh DRAM under neutron irradiation, identifying permanent and temporary stuck cells, single-bit upsets, and block errors. Different patterns of block errors were discovered, with up to two thousand faulty words per event. The damaged cells showed recovery behavior after postirradiation high-temperature annealing procedures.