On the stochastic nature of conductive points formation and their effects on reliability of MoS2 RRAM: Experimental characterization and Monte Carlo simulation

Two-dimensional (2D) monolayer molybdenum disulfide (MoS2) has been used as the non-volatile resistance switching (NVRS) layer in resistive random-access memory (RRAM) devices. In this work, an electron-beam irradiation treatment on monolayer MoS2 film to modify the defect properties has been applied to improve the reliability of the NVRS devices. Compared to unirradiated devices, the reliability of the devices with a moderate radiation has been shown to improve by up to 1.5x for yield and 11x for average DC cycling endurance. To better understand the mechanism behind, Monte Carlo simulations have been performed based on our previously proposed conductive-point model with the metal ion substitution into sulfur vacancy. The simulation yield and cycle numbers show similar trends with the experimental data. Our results provide additional insights into defect engineering to precisely control the switching properties of 2D-based RRAM devices for a wide range of applications.

Automated summary

In this study, electron-beam irradiation treatment on monolayer MoS2 film was used to improve the reliability of NVRS devices, resulting in a 1.5x increase in yield and an 11x increase in average DC cycling endurance compared to unirradiated devices. Monte Carlo simulations based on a conductive-point model with metal ion substitution into sulfur vacancy showed similar trends with experimental data, providing insights into defect engineering for precise control of 2D-based RRAM devices.