Energy-efficient radiation hardened SRAM cell for low voltage terrestrial applications

The static random access memory (SRAM) cells are essential for aerospace applications in near sub-threshold voltage, and it has challenges for the implementation of SRAM cells for terrestrial applications at low voltage regions. In this paper, a 12T radiation-hardened based (RHBD) cell has been proposed, which provides better results than the latest proposed counterparts. The proposed cell is checked and compared at a low voltage region. The simulation result shows that the proposed cell has the lowest power loss, write delay, write failure probability, and area among all considered cells. Also, the proposed cell has the highest soft error immunity, hold stability, and third-highest write, read stability among all considered cells. The proposed cell consumes 24.02%, 5.79%, 43.60%, 8.41%, 7.79%, and 16.95% less energy compared to 12T WE-QUATRO, 12T Dice, 12T QUCCE, RHPD-12T, RHBD-12T, and RHBD-13T cell, respectively. The critical charge of the proposed cell is improved by 52.4%, 67.7%, 59.4%, 18.2%, 16.1%, and 12.8% compared to WE-QUATRO, DICE, QUCCE, RHPD-12T, RHBD-12T, and RHBD-13T cell, respectively. Finally, the statistical analysis (Monte Carlo Simulation) of cells proves that the proposed cell is a promising cell for future low voltage terrestrial applications.

Automated summary

In this paper, a 12T radiation-hardened SRAM cell is proposed, which outperforms the latest proposed counterparts. The simulation results demonstrate that the proposed cell has the lowest power loss and highest stability and soft error immunity, making it a promising candidate for future low voltage terrestrial applications.