Enhanced photoresponse and high photo-detectivity in chemically deposited MoS2 thin films with inherent strain

Photoresponse of thin film heterojunctions of MoS2/Si synthesised by chemical bath deposition technique have been studied. Presence of strain as confirmed by Raman and XRD was found to be the cause of this enhancement. Particle size calculated from FESEM was found to increase with annealing temperature. XPS studies were used to ascertain the phases precisely. The valence band maxima was found to decrease with the increase in the inherent of strain. A very high photo-detectivity (similar to 10(13)) was found for the samples having 24% of MoS3.

Automated summary

Thin film heterojunctions of MoS2/Si synthesized by chemical bath deposition technique were studied for their photoresponse. The presence of strain, confirmed by Raman and XRD, was found to enhance the photo-detectivity. An increase in particle size with annealing temperature was observed. XPS studies accurately determined the phases, showing a decrease in valence band maxima with increasing strain. Samples containing 24% MoS3 exhibited very high photo-detectivity (around 10^13).