Multi-channel AlGaN/GaN Schottky barrier diodes with a half through-hole

The cutoff frequency of Schottky barrier diode (SBD) depends on its junction capacitance and series resistance. The two-dimensional electron gas (2DEG) at AlGaN/GaN interface has high carrier mobility and carrier concentration. However, AlGaN/GaN heterostructure SBD usually shows a high series resistance because of the thin 2DEG channel. In this work, multiple AlGaN/GaN heterojunctions are vertically stacked for forming multiple parallel 2DEG channels to reduce the series resistance. Multi-channel AlGaN/GaN-based air-bridge structure planar SBDs with a half through-hole are demonstrated. The series resistance of quintuple-channel SBD is only 39.5% of the single-channel SBD's. Moreover, a low capacitance is obtained by the Schottky electrode with a half through-hole structure. The low series resistance and the low capacitance contribute to a 16 GHz cutoff frequency in millimeter-wave band.

Automated summary

This study focuses on reducing the series resistance of Schottky barrier diodes (SBD) by vertically stacking multiple AlGaN/GaN heterojunctions, resulting in a significant improvement in cutoff frequency to 16 GHz in the millimeter-wave band. The utilization of a half through-hole structure for the Schottky electrode also helps achieve a low capacitance, contributing to the overall performance enhancement. By forming multiple parallel 2DEG channels, the SBDs demonstrate a significant decrease in series resistance, with the quintuple-channel SBD showing only 39.5% of the single-channel SBD's resistance.