Journal
MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS
Volume 25, Issue -, Pages -Publisher
UNIV FED SAO CARLOS, DEPT ENGENHARIA MATERIALS
DOI: 10.1590/1980-5373-MR-2021-0259
Keywords
CBD; Power output; Photo response; Flat band potential; Spectral response
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This study synthesized copper zinc selenide thin films on stainless steel plates using a chemical bath deposition method and characterized their photovoltaic properties. The results showed that the Cu0.5Zn0.5Se thin films exhibited p-type conductivity and had high open circuit voltage, short circuit current, and fill factor.
Inorganic ternary type materials are induced compound is worked as fundamental applications in transformation of the solar light energy into electrical energy. Copper zinc selenide thin films have been synthesized by chemical bath deposition method on to stainless steel plate. The configuration of fabricated cell is p-Cu0.5Zn0.5Se| NaOH(1M) + S(1M) + Na2S(1M) |C(graphite). The Photovoltaic cell characterization of the films is carried out by studying current-voltage characteristics in dark, capacitance-voltage in dark, barrier height measurements, power output, photoresponse and spectral response. The study shows that Cu0.5Zn0.5Se thin films are p-type conductivity. The junction ideality factor was found to be 2.93. The flat band potential was found to be -0.708V. The barrier height value was found to be 0.186 eV. The study of power output characteristic shows open circuit voltage, short circuit current, fill factor and efficiency were found to be 150 mV, 21 mu A, 42.13%, and 0.63%, respectively. Photoresponse shows lighted ideality factor is 2.89. Spectral response shows the maximum current observed at 580 nm.
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